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| GaAs MMIC q q q q q q q q q CGY 31 Two-stage monolithic microwave IC (MMIC amplifier) All-gold metallization Chip fully passivated Operating voltage range: 3 to 6 V 50 input/output; RLIN RLOUT > 10 dB Gain: 18 dB at 1.6 GHz Low noise figure: 4 dB at 1.6 GHz 3 dB bandwidth: 2 GHz Hermetically sealed package ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Ordering Code Circuit Diagram (Pin Configuration) Package1) TO-12 CGY 31 Q68000-A6887 1 2 3 4 RF output, VS Interstage, VS RF input RF and DC ground, case 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 CGY 31 Maximum Ratings Parameter Supply voltage, TC 80 C Total power dissipation, TC 50 C Channel temperature Storage temperature range Thermal Resistance Channel - case RthchC 50 K/W Symbol VS Ptot Tch Tstg Values 6 2 150 - 55 ... + 150 Unit V W C Note: Exceeding any of the maximum ratings may cause permanent damage to the device. Appropriate handling procedures are required to protect the electrostatic sensitive IC against degradation due to excess voltage or excess current spikes. Excellent ground connection of lead 4 and the package (e. g. soldered on microstripline laminate) is required to achieve guaranteed RF performance and stable operation conditions and provides adequate heat sink. Low parasitic capacitance of the bias network to port 2 gives optimum gain and flatness. Input and output connections must be DC isolated by coupling capacitors. Semiconductor Group 2 CGY 31 Electrical Characteristics at TA = 25 C, VS = 4.5 V, RS = RL = 50 , unless otherwise specified, (for application circuit see next page). Parameter Operating current Power gain f = 800 MHz to 1800 MHz Gain flatness f = 800 MHz to 1800 MHz Noise figure f = 800 MHz to 1800 MHz Input return loss f = 800 MHz to 1800 MHz Output return loss f = 800 MHz to 1800 MHz Third order intercept point two-tone intermodulation test f1= 806 MHz, f2= 810 MHz, Po = 10 dBm (both carriers) 1 dB gain compression f = 800 MHz to 1800 MHz Symbol min. Iop G G Values typ. 160 18 2.0 4.0 13 12 32.5 max. 200 - 2.5 5.0 9.5 9.5 - - 15 - - - - 31 Unit mA dB F RLIN RLOUT IP3 dBm P1dB - 19 - Semiconductor Group 3 CGY 31 Application Circuit f = 800 MHz to 1800 MHz Legend of components C1, C2, C3 R1 L1 : 100 pF : 1 nF 39 70 nH Chip capacitors Resistor, e.g. l = 4 mm; 1.8 mm with axial leads Inductance, e.g. 8 turns, 0.25 mm enamelled copper wire wound on R. The geometrical combination of L1 and R influences the frequency response. Inductance, e.g. 5 turns, 0.25 enamelled copper wire wound on M3-nylon rod. Zener diode, 1.3 W (type BZW 22 C 6 V 2). L2 D 40 nH 6V2 Note: For lower frequencies (f = 100 ... 900 MHz) the performance of CGY 31 is comparable to that of CGY 21, if an interstage circuit with L1 = 1 H is connected. Semiconductor Group 4 CGY 31 Total power dissipation Ptot = f (TC) Max. supply voltage VSmax = f (TC) Operating current Iop = f (VS) Semiconductor Group 5 CGY 31 Power gain G = f (f) VS = 4.5 V, RS = RL = 50 Power gain G = f (VS) RS = RL = 50 Power output G = f (Pout) VS = 4.5 V, RS = RL = 50 f = 0.8 GHz Semiconductor Group 6 CGY 31 Third order intercept point IP3 = f (VS) f = 0.8 GHz, RS = RL = 50 The intermodulation ratio dIM can easily be determined. dIM = 2 (IP3 - P0) IP3 = Intercept point dIM = Intermodulation ratio P0 = Power level of each carrier in dBm Noise figure F = f (f) VS = 4.5 V, RS = RL = 50 Noise figure F = f (VS) RS = RL = 50 Semiconductor Group 7 CGY 31 S Parameters f GHz S11 MAG ANG S21 MAG ANG S12 MAG ANG S22 MAG ANG VS = 4.5 V, Z0 = 50 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 0.42 0.28 0.26 0.25 0.24 0.24 0.23 0.22 0.19 0.16 0.12 0.06 0.02 0.06 0.11 0.15 - 35 - 42 - 51 - 64 - 72 - 76 - 78 - 77 - 73 - 71 - 66 - 56 -8 107 108 111 7.77 8.93 9.04 9.16 9.15 8.99 8.62 8.15 7.52 6.80 6.06 5.45 4.81 4.15 3.43 2.68 23 - 12 - 34 - 52 - 71 - 90 - 109 - 127 - 145 - 162 - 179 165 150 135 121 110 0.007 0.008 0.008 0.009 0.009 0.010 0.010 0.011 0.011 0.011 0.012 0.011 0.012 0.012 0.012 0.014 31 21 21 22 28 27 29 30 29 32 33 35 36 36 41 40 0.25 0.21 0.21 0.22 0.23 0.24 0.25 0.27 0.30 0.33 0.35 0.36 0.36 0.35 0.34 0.33 - 19 - 20 - 23 - 30 - 34 - 36 - 35 - 31 - 26 - 22 - 17 - 13 - 11 - 10 - 13 - 20 S11 = f (f) VS = 4.5 V, Z0 = 50 S12 = f (f) VS = 4.5 V, Z0 = 50 Semiconductor Group 8 CGY 31 S Parameters (continued) S21 = f (f) VS = 4.5 V, Z0 = 50 S22 = f (f) VS = 4.5 V, Z0 = 50 Semiconductor Group 9 |
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